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Saturday, August 8, 2020 | History

2 edition of Semiconductor surfaces and field effect in surface investigation. found in the catalog.

Semiconductor surfaces and field effect in surface investigation.

Abdolreza Tahmasbi

Semiconductor surfaces and field effect in surface investigation.

by Abdolreza Tahmasbi

  • 91 Want to read
  • 27 Currently reading

Published .
Written in English


The Physical Object
Pagination99 leaves
Number of Pages99
ID Numbers
Open LibraryOL20274153M

  Semiconductor nanowires (NWs) are characterized by an extraordinarily large surface-to-volume ratio. Consequently, surface effects are expected to play a much larger role than in thin films. Here, we review a research focused on the impact of the surface on the electrical and optical properties of catalyst-free GaN NWs with growth by: Field Effect in Semiconductor-Electrolyte Interfaces: Application to Investigations of Electronic Properties of Semiconductor Surfaces Pavel P. Konorov, Adil M. Yafyasov, and Vladislav B. Bogevolnov This book presents a state-of-the-art understanding of semiconductor .

  The ability to add new functionalities to semiconductor surfaces builds upon two decades of research in which the concept of the surface as a chemical reagent in semiconductor surface chemistry has been shown to be a powerful construct (7 –15). Specifically, surfaces of group IV elemental semiconductors are viewed as a collection of specific Cited by: Atalla's surface passivation process is considered the most important advance in silicon semiconductor technology, paving the way for the mass-production of silicon semiconductor devices. By the mids, Atalla's process for oxidized silicon surfaces was used to fabricate virtually all integrated circuits and silicon devices. [39].

The MOS structure is a compulsory part of electronic devices, such as solar cells, metal oxide semiconductor field-effect transistors (MOSFETs) and Schottky diodes [19–21]. The selection of substrate, an intermediate layer, and growth process plays a key role in determining the characteristics of Schottky barrier diodes (SBDs). Semiconductor Surfaces and Interfaces 3 The Semiconductor-Vacuum interface For a surface of a doped semiconductor, electrons occupying the conduction band (orig-inating from the dopants) can lower their energy by fllling empty surface band states (if available, which is often the case). This gives a net surface charge nS (charge per area, in.


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Semiconductor surfaces and field effect in surface investigation by Abdolreza Tahmasbi Download PDF EPUB FB2

The field effect presented here by Pavel Konorov, Adil Yafyasov, and Vladislav Bogevolnov is a new method, one that allows investigation of the physical properties of semiconductor and superconductor surfaces. Before the development of this method, it was impossible to test these surfaces at room : Pavel P.

Konorov, Adil M. Yafyasov, Vladislav B. Bogevolnov. This book presents a state-of-the-art understanding of semiconductor-electrolyte interfaces. It provides a detailed study of semiconductor-electrolyte interfacial effects, focusing on the physical and electrochemical foundations that affect surface charge, capacitance, conductance, quantum effects, and other properties, both from the point of view of theoretical modeling and metrology.

Field effect in semiconductor-electrolyte interface: application to investigations of electronic properties of semiconductor surfaces Pavel P.

Konorov, Adil M. Yafyasov, and Vladislav B. Bogevolnov This book presents a state-of-the-art understanding of semiconductor-electrolyte interfaces. Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces.

The first part introduces the general aspects of space-charge layers, of clean-surface and adatom-induced surfaces states, and of interface states. The preceding paper contains a discussion of measurements of field effect on germanium surfaces under conditions in which there is a thermodynamic equilibrium within the semiconductor.

This paper is concerned with various experiments on germanium surfaces for which the thermodynamic equilibrium between holes and electrons in the semiconductor has been upset.

Secondly, there is some molecule-semiconductor interaction (interaction between the electric field generated by the dipoles of organic molecules and the surface cha 64 or some induction of.

However, the RTA process is not suitable for III–V semiconductor materials, because a high temperature causes a loss of the chemical species of the group V elements from the semiconductor surfaces, resulting in the surface decomposition and the formation of clusters consisting of group III elements (Vitomirov et al., ).

Surface Space-Charge Region in Thermal Equilibrium 20 Solutions of Poisson's Equation 20 Surface Space-Charge 24 Shape of Surface Barriers 26 Comparison of Space-Charge Layers at Semiconductor and Metal Surfaces 27 Quantum Size-Effects in Space-Charge Layers 28 3. Surface States Surface-specific states are present at the surfaces of all matters.

On metallic surfaces, they are known to lead to a surface dipole which contributes to the work function of the metal surface. On semiconductors, the presence of surface states in the band gap is known to "pin" the Fermi level position of the semiconductor.

Surfaces (ISSN ) is a peer-reviewed open access journal covering all aspects of surface and interface science, and it is published online quarterly by MDPI. Open Access - free for readers, with article processing charges (APC) paid by authors or their institutions.; Rapid Publication: manuscripts are peer-reviewed and a first decision provided to authors approximately days after.

Surface electronic structure Units Atomic units are used, with e = h = m = unit of energy is the Hartree ( X lo-'* J), though sometimes we shall use eV ( eV = 1 au); the unit of length is the Bohr radius ( x lo-'' m).The electron density is usually given in terms of r, the radius of a sphere containing one electron.

We present the synthesis and characterization of a fused-ring compound, dithieno[2,3-d:2‘,3‘-d‘]thieno[3,2-b:4,5-b‘]dithiophene (pentathienoacene, PTA).

In contrast to pentacene, PTA has a larger band gap than most semiconductors used in organic field-effect transistors (OFETs) and therefore is expected to be stable in air. The large π-conjugated and planar molecular structure of PTA Cited by: The field penetrates ~10 A into the semiconductor surface for intrinsic cases, and ~A for an n-type semiconductor in a positive field, or for a p-type semiconductor in a negative field.

Both the surface potential and the field penetration will affect significantly the electronic properties of the near surface by: Abstract. Surfaces and interfaces play a very important role in semiconductor technology. By a ‘surface’ we usually mean the boundary between a solid and a gas (or vacuum), while the term ‘interface’ tends to be applied to the boundary between two dissimilar solids, such as a semiconductor Author: E.

Rhoderick. The ion phenomena on semiconductor and dielectric surfaces with photoacids Article (PDF Available) in Surface Science August with 10 Reads How we measure 'reads'. We present “design rules” for the selection of molecules to achieve electronic control over semiconductor surfaces, using a simple molecular orbital model.

The performance of most electronic devices depends critically on their surface electronic properties, i.e., surface band-bending and surface recombination velocity. For semiconductors, these properties depend on the density and energy Cited by: Non-Equilibrium Conditions Within The Semiconductor --Measurements of Inversion Layers on Silicon and Germanium and their Interpretation --Slow Relaxation Phenomena on the Germanium Surface --Effects of Thick Oxides on Germanium Surface Properties --Surface Studies on Photoconductive Lead Sulfide Films --Surface Studies on Cleaved Crystals of Lead Sulfide --III Adsorption and Catalysis --Introductory Remarks: Bridges of Physics and Chemistry across the Semiconductor Surface.

It provides a detailed study of semiconductor-electrolyte interfacial effects, focusing on the physical and electrochemical foundations that affect surface charge, capacitance, conductance, quantum effects, and other properties, both from the point of view of theoretical modeling and metrology.

surface techniques, i.e., X-ray photoelectron spectroscopy (XPS), photoluminescence spectroscopy (PL), and atomic force microscopy (AFM), Raman spectroscopy, combined with electrical characterization.

Many reviews of passivation on III-V semiconductor surfaces were reported in the past, but most focused on particular techniques. The III-V compound semiconductor, which has the advantage of wide bandgap and high electron mobility, has attracted increasing interest in the optoelectronics and microelectronics field.

The poor electronic properties of III-V semiconductor surfaces resulting from a high density of surface/interface states limit III-V device technology development. Various techniques have been applied to Cited by: 7.

Summary This chapter contains sections titled: Metal and Semiconductor Surfaces in a Vacuum Metal‐Semiconductor Contacts (Schottky Junctions) p‐n Junctions. Clean metal and semiconductor surfaces can be produced, for instance, by cleavage of a crystal in vacuum. This chapter examines certain similarities between semiconductor‐metal junctions and semiconductor‐liquid by: 1.Semiconductors and Semiconductor Devices.

Elements of Semiconductor Physics. Semiconductors under Non-Equilibrium Conditions. p-n Junction. Junction Transistor. Junction Field-Effect Transistors.

Surface Effects and Surface-Controlled Devices. Theory of Semiconductor Surfaces. Surface Effects on p-n Junctions. Surface Field-Effect Transistors.